Digital microchip XSJ-10-D4-60

photodiodeInGaAsInP

This 3.1Gbps photodiode chip is InGaAs/InP PIN planar structure and top-illuminated digital photodiode chip, active area size is Φ60μm. That features is low dark current, low capacitance, high responsivity and excellent reliability. Application in 3.1Gbps and below optical receiver and EPON ONU. 1. Φ60μm active area. 2. High responsibility. 3. Low dark current. 4. High Bandwidth. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. 100% testing and inspection. Applications 1. ≤3.1Gbps digital receiver. 2. EPON ONU.