1. Electricity - Electronics
  2. Electronic Component
  3. Power microchip
  4. PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
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Photodiode microchip XSJ-10-SPD-51
powerInPInGaAs

Photodiode microchip - XSJ-10-SPD-51 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - power / InP / InGaAs
Photodiode microchip - XSJ-10-SPD-51 - PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD. - power / InP / InGaAs
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photodiode, power, InP, InGaAs

Description

This high sensitivity photodiode chip (super PD chip) is InGaAs/InP planar structure. Features are high responsivity, low capacitance and low dark current, application in 2.5Gbps GPON OUN receiver. The high sensitivity 2.5Gbps PIN PD chip working with super TIA can replace 2.5Gbps APD+TIA, can reducing ONU cost and power consumption. 1. Φ51μm active area. 2. High responsibility and low dark current. 3. Planar Structure. 4. Low dark current. 5. High sensitivity, works with super TIA can replace 2.5Gbps APD-TIA. 6. Data rate up to 2.5Gbps. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. 100% testing and inspection. Applications 1. 2.5Gbps GPON ONU receiver.

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