Photodiode array XSJ-10-G6A-38H-K4

Description This high data rate 4X25Gbps photodiode chip is GaAs top- illuminated 1x4 Array PIN structure. Features is high responsibility, low capacitance and low dark current, active area size is Φ38μm, signal and both ground bond pad are design on chip’s top for easy wire-bond, application in 850nm 25Gbps short-range data communication, chip’s dimension meet the packaging requirement for 25Gbps per channel module or Active Optical Cable(AOC) receiver. Features Φ38μm active area. Low capacitance. Low dark current. High responsibility. Data rate: up to 25Gbps above per channel. Ground-Signal-Ground bond pad and passivation design outside the bond pad area. Die pitch: 250μm Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. RoHS2.0 (2011/65/EU) compliant. Applications Data communication transceiver. 25Gbps AOC (Active Optical Cable) receiver at 850nm. 25Gbps SFP+. 4X25Gbps QSFP.