- Metrology - Laboratory
- Optical Component
- Chip photodiode array
- PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
GaAs photodiode array XSJ-10-G5-70-K4PINchip
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Characteristics
- Options
- PIN, GaAs, chip
Description
This high data rate 4X10Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc.
1. Φ70μm active area.
2. Low capacitance and low dark current.
3. High responsibility.
4. Data rate up to 10Gbps.
5. Die pitch: 250μm
6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
7. 100% testing and inspection.
Applications
1. 10Gbps AOC (Active Optical Cable) receiver at 850nm.
2. Infiniband.
3. SONET/SDH
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Data Center Applications
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