Digital microchip XSJ-10-M-100-EI

photodiodeInGaAsInP

This Edge-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and double cathode on top. Edge detectable area size is 100μmX80μm, and higher responsivity in the wavelength region from 980nm to 1620nm.Applied to monitoring the optical power output from the back facet of various LD, FTTH digital optical communications and optical interconnection. 1. NPN bond pad on top. 2. Edge detectable area: 100μmX80μm. 3. High responsibility. 4. Low dark current. 5. Low operating bias voltage. 6. -40℃ to 85℃ operation range. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. 100% testing and inspection. 9. Satisfy non-hermetic packages. Applications 1. Back facet laser power monitoring. 2. FTTH digital optical communications. 3. Optical interconnection.