Photodiode array XSJ-10-D6A-20-K4-750

Description This 4X25Gbps Array 100Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ20μm. Its features is high, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X25Gbps quad channel transimpedance amplifiers(TIA), application in long wavelength applications, high date rate up to 4X25Gbps with single mode fiber optical receiver. Features Φ20μm active area. Ground-Signal-Ground (GSG) bond pad structure, 4X25G array. Low dark current, low capacitance, high responsibility. Date rate: ≥ 25Gbps/channel. Die pitch: 750μm. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 100% testing and inspection. Applications IEEE 100 Gigabit Ethernet. 100G CWDM4，PSM4，CLR4 100G(4X25Gbps) links. Single mode datacom and telecom. Fiber-optic transceivers, receiver and transponders.