Photodiode microchip XSJ-10-G6-35

This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ35μm, signal and ground bond pads on top for TO-CAN package wire-bond, application in 20-25 Gbps short-range optical data communication which is at 850nm. 1. Φ35μm active area. 2. Low capacitance. 3. Low dark current. 4. Data rate up to 28Gbps. 5. GS bond pad on top. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. 100% testing and inspection. Applications 1. 25Gigabit Ethernet/Fiber channel. 2. 25Gbps AOC (Active Optical Cable) receiver at 850nm. 3. 25Gbps VCSEL based parallel optical interconnects. 4. 25Gbps SFP+.