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Photodiode microchip XSJ-10-G5-55

photodiode microchip
photodiode microchip
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photodiode

Description

This high data rate 14Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ55μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc. 1. Φ55μm active area. 2. Low capacitance and low dark current. 3. Data rate up to 14Gbps. 4. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 5. 100% testing and inspection. Applications 1. 10Gigabit BASE-SR Ethernet. 2. 8Gbps Fiber Channel data transmission. 3. FDR InfiniBand data transmission.

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