Photodiode microchip XSJ-10-G5-70

This high data rate 10Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc. 1. Φ70μm active area. 2. Low capacitance and low dark current. 3. High responsibility. 4. Data rate up to 10Gbps. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. 100% testing and inspection. Applications 1. 10Gigabit BASE-SR Ethernet. 2. 10Gbps short range data communication at 850nm. 3. Multi-mode datacom and telecom. 4. 8Gbps Fiber Channel data transmission. 5. Fiber-optic transceivers receivers and transponders.