- Electricity - Electronics
- Electronic Component
- Photodiode microchip
- PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.
Photodiode microchip XSJ-10-M-10000InGaAsInP
Add to favorites
Compare this product
Characteristics
- Options
- photodiode, InP, InGaAs
Description
The top-illuminated InGaAs monitor PIN photodiode chip, which is planer structure anode on top and cathode on back. With active area of Φ10000μm, and high responsivity in the wavelength region from 900nm to 1700nm.Applied to monitoring the optical power output from the back facet of various LD and other monitor.
1. Planar structure on n+ InP substrate with top anode contact.
2. Φ10000μm active area.
3. High responsibility.
4. Low dark current.
5. Low operating bias voltage.
6. -40℃ to 85℃ operation range.
7. Excellent reliability: All chips have passed the qualification requirements as specified by 8. Telcordia -GR-468-CORE.
9. 100% testing and inspection.
10. Customized chip dimension is available.
Applications
1. Back facet laser power monitoring.
Catalogs
No catalogs are available for this product.
See all of PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD.‘s catalogsOther PHOGRAIN TECHNOLOGY（SHENZHEN） CO., LTD. products
Optical Measuring Equipment Applications
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.