Photodiode microchip XSJ-10-M-2000

InGaAsInP

This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure, anode on top and cathode on back. Active area size is Φ2000μm, and high responsivity in the wavelength region from 980nm to 1620nm. Application to monitoring the optical power output from the back facet of various LD. 1. Planar structure on n+ InP substrate with top anode contact. 2. Φ2000μm active area. 3. High responsibility. 4. Low dark current. 5. Low operating bias voltage. 6. -40℃ to 85℃ operation range. 7. Excellent reliability: All chips have passed the qualification requirements as specified by 8. Telcordia -GR-468-CORE. 8. 100% testing and inspection. 9. Customized chip dimension is available. Applications 1. Back facet laser power monitoring.