Photodiode array XSJ-10-G5-55-K4

This high data rate 4X14Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc. 1. Φ55μm active area. 2. Low capacitance and low dark current. 3. High responsibility. 4. Data rate up to 14Gbps. 5. Die pitch: 250μm 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. 100% testing and inspection. Applications 1. 14Gbps AOC (Active Optical Cable) receiver at 850nm. 2. Infiniband. 3. SONET/SDH