InGaAs photodiode array XSJ-10-D5-50H-K4

PINchip

The high-speed 4X10Gbps photodetector chip is an InGaAs/I InP PIN structure and front illuminated type, characterized by high responsiveness, low capacitance, and low dark current. The size of the photosensitive area is 50um, and the P and N pads are designed at the top for easy packaging of solder wires. Mainly paired with 4X10Gbps four channel TIA, it is used for long-distance, high-speed, and single-mode 4X10G bps optical receivers and data communication. 1. Φ50μm active area. 2. Ground-Signal-Ground (GSG) bond pad structure, 4X10Gbps array. 3. Low dark current, low capacitance, high responsibility. 4. Die pitch: 250μm. 5. 100% testing and inspection. 6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 7. RoHS2.0 (2011/65/EU) compliant. Applications 1. 40Gbps QSFP+ LR4