Digital microchip XSJ-10-EMPD-120

detectionInGaAsInP

The XSJ-10-EMPD-120 is a side illuminated InGaAs InP PIN monitoring photodetector chip with a planar structure. The anode is on the front and the cathode is on the back, and the chip side detection window is 120umX60um, suitable for data centers and telecommunications edge emitting lasers. It has high responsiveness in the 980nm to 1620nm wavelength range and is suitable for non airtight packaging. 1. P bond pad on top, N Bond pad on bottom 2. Edge detectable area: 120μmX60μm. 3. High responsibility and low dark current. 4. Supports eutectic soldering processes. 5. 100% testing and inspection. 6. Meet a non-hermetic package. 7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 8. RoHS2.0 (2011/65/EU) compliant. Applications 1. Back facet laser power monitoring. 2. FTTH digital optical communications. 3. Optical interconnection.