MOSFET transistor max. 550 W | HiperTFS™
power

MOSFET transistor - max. 550 W | HiperTFS™ - Power Integrations - power
MOSFET transistor - max. 550 W | HiperTFS™ - Power Integrations - power
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Characteristics

Type
MOSFET
Technology
power

Description

Description The HiperTFS™ device family members incorporate both a high-power two-switch-forward converter and a mid-power flyback (standby) converter into a single, low-profile eSIP™ power package. The single chip solution provides the controllers for the two-switch-forward and flyback converters, high- and low-side drivers, all three of the high-voltage power MOSFETs, and eliminates the converter's need for costly external pulse transformers. The device is ideal for high power applications that require both a main power converter (two-switch forward) up to 414 W, and standby converter (flyback) up to 20 W. HiperTFS includes Power Integrations' standard set of comprehensive protection features, such as integrated soft-start, fault and over-load protection, and hysteretic thermal shutdown. HiperTFS utilizes advanced power packaging technology that simplifies the complexity of two-switch forward layout, mounting and thermal management, while providing very high power capabilities in a single compact package. The devices operate over a wide input voltage range, and can be used following a power-factor correction stage such as HiperPFS.

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