Bell oven SiCube

sublimationcrystal growthgas

The HTCVT / HTCVD system has been especially designed for Silicon Carbide (SiC) crystal growth by sublimation / thermal decomposition (pyrolysis) of source gases at high temperatures. By high vacuum capability ultra clean surfaces with regard to both water and oxygen can be achieved prior to the start of process. The system design allows the use of substrates (seeds) up to 4” diameter. Technical specifications Reactor tube operating pressure: approx. 5 - 900 mbar operating temperature: max. 2,600 °C Power supply power: max. 80 kW frequency: 6 - 8 kHz Advantages HTCVD: high purity SiC-material adjustment of C/Si ratio doping Advantages Sublimation: well known technology meets requirements for power substrates Applications - PFC (Power Factor Converter) - Inverts and Converters for Hybrid Technology - Inverter for Solar Power - High Frequency Electronics - Opto-electronic