High throughput next generation rear side etching
The RENA InEtchSide automated processing equipment is designed for ultra-high throughput removal of silicon oxide layers and doped glasses (e.g. PSG or BSG). The proven and optimized, patented single side etching process ensures lowest chemical front side attack. This is used in the fabrication of high efficiency solar cell concepts, like IBC, PERC, TOPCon and others. The tool is based upon the RENA NIAK 4 inline platform.
Features and Benefits
Fully automated wet chemical single side etching - Inline on 10-12 lanes
Single side removal of silicon oxide (SiO2), doped glasses (PSG/BSG)
RENA Fast Etch Technology: processing at T > RT possible
Uses HF for single side processing (additional chemistry optional, e.g. HCl or BHF)
Integrated rinsing and drying of wafers
Long bath lifetime due to feed-andbleed function
Lowest breakage rate in industry
Based on latest RENA NIAK 4 inline processing platform
High uptime
Easy maintenance
Options
MES interface (SECS/GEM)
Media cabinet for chemical supply
Waste pump station for chemical drain/waste water
Sensors for process control (e.g. pH, conductivity)
Areas of Application
Rear side oxide etching for high efficiency solar cells
Single side SiO2, PSG- or BSG removal
Fully compatible with PERC, IBC and TOPCon technology