The InPolySide® 3+ provides superior rear side and edge etching for TOPCon applications. Poly-Si wrap around from LPCVD and PECVD is removed. With high throughput and full flexibility wafer size is the tool ready for the next generation of solar cells. Designed as a space saving one-tool solution, the InPolySide® covers pre-oxide etch, poly-etching, cleaning or glass etching and rinsing steps. No additional wafer handling is required.
Areas of Application
TopCon technology
Upgrade from PERC possible
Single side and edge etching of Poly-Si
Features and benefits
Edge etching for shunt-free TopCon cells
Highly variable and well-known process, adaptable to customers demands:
- Low CoO
- N-Type cells
- Selective emitter for all available kinds of types of Poly-Si (PECVD, LPCVD)
Process patented by RENA
Highly optimized hardware configuration and process settings
1-tool solution