Chip photodiode array PA2100

technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode. Features Available in four different options Peak wavelength at 830 nm Benefits High responsitivity Low capacitance Suitable for SMT High reliability