Chip photodiode array PA2100
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Characteristics
- Options
- chip
Description
technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode.
Features
Available in four different options
Peak wavelength at 830 nm
Benefits
High responsitivity
Low capacitance
Suitable for SMT
High reliability
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.