Chip photodiode array PA1001

chip photodiode array
chip photodiode array
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Description

The photosensor consists of 6-chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode. Features High responsitivity Low capacitance Suitable for SMT High reliability Peak wavelength at 830 nm

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Meet this supplier at the following exhibition(s):

SPS 2024
SPS 2024

12-14 Nov 2024 Nüernberg (Germany) Hall 4A - Stand 210

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    *Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.