Chip photodiode array PA1001
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Characteristics
- Options
- chip
Description
The photosensor consists of 6-chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode.
Features
High responsitivity
Low capacitance
Suitable for SMT
High reliability
Peak wavelength at 830 nm
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.