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Silicon carbide MOSFET SCT4036KW7SiC
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Characteristics
- Material
- silicon carbide, SiC
Description
SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating ; RoHS compliant
Other ROHM Semiconductor products
Silicon-carbide (SiC) Power Devices
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.