IGBT transistor RGW25N135F1A
power

IGBT transistor - RGW25N135F1A - Rongtech Industry (Shanghai) Inc., - power
IGBT transistor - RGW25N135F1A - Rongtech Industry (Shanghai) Inc., - power
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Characteristics

Type
IGBT
Technology
power
Current

25 A

Voltage

1,350 V

Description

Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc. FEATURES •High breakdown voltage to 1350V for improved reliability •Trench-Stop Technology offering : >High speed switching >High ruggedness, temperature stable >LOW VcEsat >Easy parallel switching capability due to positive temperature coefficient in VcEsat •Soft current turn-off waveforms •Enhanced avalanche capability VCE:1350A IC:25A VCE(SAT) IC=25A: 2.0V Application: * Inductive cooking * Inverterized microwave ovens * Resonant converters * Soft switching applications * Soft switching applications
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.