IGBT transistor RGW50N65F1A
power

IGBT transistor - RGW50N65F1A - Rongtech Industry (Shanghai) Inc., - power
IGBT transistor - RGW50N65F1A - Rongtech Industry (Shanghai) Inc., - power
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Characteristics

Type
IGBT
Technology
power
Current

50 A

Voltage

650 V

Description

Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine. FEATURES •High breakdown voltage to 650V for improved reliability •Trench-Stop Technology offering : >High speed switching >High ruggedness, temperature stable >Short circuit withstand time - 5ps >LOW VcEsat >Easy parallel switching capability due to positive temperature coefficient in VcEsat Enhanced avalanche capability APPLICATION •Uninterruptible Power Supplies •Inverter •Welding Converters •PFC applications •Converter with high switching frequency
*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.