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IGBT transistor module RTU50HF120FA1power
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Characteristics
- Type
- IGBT
- Technology
- power
- Current
50 A
- Voltage
1,200 V
Description
Features:
•1200V50A,VCE(sat)(typ.)=3.0V
•Ultrafast switching speed
•Excellent short circuit ruggedness
•34mm half bridge module
General Applications:
Rongtech’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications
Catalogs
RTU50HF120FA1
7 Pages
Other Rongtech Industry (Shanghai) Inc., products
Discrete IGBT & Module power semi conductors
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.