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Silicon MOSFET RM20N10PA
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Characteristics
- Material
- silicon
Description
This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.
General Features
•VDS=100V,ID=20A, Rdson≦70mΩ @VGS=10V (Typ:58mΩ)
•Extended Safe Operating Area
•Low Reverse transfer capacitances
•100% Single Pulse avalanche energy Test
Application
•Power switching application
•DC Motor Control
• UPS
Catalogs
RM20N10PA
5 Pages
Other Rongtech Industry (Shanghai) Inc., products
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.