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Silicon MOSFET RM110N06PA
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Characteristics
- Material
- silicon
Description
This MOSFETs fromRongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.
Feature:
VDS=60V,ID=110A Rdson≦10mΩ @VGS=10V (Typ:7.0mΩ)
Extended Safe Operating Area
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Application
•Power switching application
•DC Motor Control
• UPS
Catalogs
RM110N06PA
5 Pages
Other Rongtech Industry (Shanghai) Inc., products
Mosfet power semi conductors
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