DESCRIPTION
The RVT10180NT/D is an N-channel enhancement mode power MOS field effect transistor which is produced using RongteLVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
FEATURES
♦Low gate charge
♦Low Crss
♦Fast switching
♦Improved dv/dt capability