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MOSFET RVF4N90F/MJ

MOSFET - RVF4N90F/MJ - Rongtech Industry (Shanghai) Inc.,
MOSFET - RVF4N90F/MJ - Rongtech Industry (Shanghai) Inc.,
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Description

GENERAL DESCRIPTION RVF4N90F/MJ is an N-channel enhancement mode power MOS field effect transistor which's produced use Rongtec proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ♦Low gate charge ♦Low Crss ♦Fast switching ♦Improved dv/dtcapability

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