RVF3878PN is an N-channel enhancement mode power MOS field effect transistor which's produced use Rongtec proprietary F-Cell™ structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
♦Low gate charge
♦Low Crss
♦Fast switching
♦Improved dv/dt capability