Annealing furnace SC-LED05L/RA

for metallization

By adjusting the Fermi energy level of the cell, controlling the total amount and valence state of H,improving the efficiency of H passivation and defect repair, to reduce the LID effect of P-type cells and improve the conversion efficiency of N-type cells. Process Flow: Pre-heating →Light Injection →Cooling Dual-track production line, the rack and electrical parts completely independent without interfering operations of each other. High throughput: match with the throughput of screen printing process, CT≤0.80s,based on silicon wafer size M10 (18X±0.5mm*18X±0.5mm).