Intrinsic and doped amorphous silicon films.
Processes
Ionized precursor gases deposit thin films on a substrate.
• Quick RF ignition with least reflect power for uniform and stable film deposition.
• Matured and stable multi-feed in RF technology compatible for even large process chamber.
• Continuous adjustable gas between diffuser and substrate providing flexible process possibilities.
• High throughput with relative low cost, with capability of customized product design.
• Modularized design for easy installation and maintenance, together with highest safety protocol from design to fabrication.