AlO+SiN Thin-film Deposition.
• Atomic layer deposition process, with better film uniformity.
• Multi-layer thin film deposited in the same process equipment or same furnace tube, reducing process steps and wafer breakage rate, improving yield effectively.
• Independent R&D of liquid source precursor vapor delivery and precursor rapid switching technology.
• Suitable for deposition of passivation layer for different precursors and materials, with a large space for process expansion.