Silicon carbide power module SEMITOP® E1/E2

Introducing the Latest SiC Portfolio Compliment Silicon Carbide with low inductance packages Reach higher power density with the new SEMITOP E1/E2 Silicon Carbide portfolio. With commutation inductances down to 4nH, the SEMITOP E1/E2 packages are the perfect match with the latest SiC technology. Not only are industrial standard pin layouts available, SEMIKRON also offers a layout which simplifies PCB design and paralleling of modules. In addition to its industrial standard package design, the SEMITOP E1/E2 also offer up to 20% lower thermal resistance compared conventional designs. This decrease allows for chips to operate cooler, extending product lifetime or reducing cooling design effort. SEMITOP E1/E2 industrial standard packages Low commutation inductance, down to 4nH Kelvin source and temperature sensor included for all modules Portfolio from 40A up to 250A based on 1200V SiC MOSFET Half-bridge, H-Bridge, sixpack and TNPC topologies Supply chain safety thanks to multiple sourcing down to chip level High power density thanks to 20% Rth reduction Reduce magnetics with high switching frequency Simplified PCB with additional optimised SEMIKRON pin layout