Diffuse reflective sensor photoelectric sensor EP Series

retroreflective sensorthrough-beamrectangular

EP series photoelectric sensor, with CE certification, standard common size, can replace the international brand in nice price; Adopting imported microchip, quick response time. Standard size: Universal standard size, which replace many China and international brands; Built-in M3 metal thread to strengthen the sensor; Imported chip design is adopted, faster response speed; Anti-interference: Optimized interference avoidance algorithm, stronger ability in anti-light and electromagnetic interference; Adopting anti-interference design, up to two sensors can be installed to each other; Equipped with output reverse connection protection to avoid sensor wiring failure. Sensitivity can be adjusted: Three-wire type, adjustable sensitivity, NO/NC switchable; The optical axis adjustment is simple, and the deviation between the optical axis and the mechanical axis is controlled within ±2.5°. Parameter: • Sensing distance : Thru-beam: 2m, 6m, 20m Retro-reflection: 3m 100mm] Diffuse reflection: 100mm,,600mm,300mm,20-200mm • Detection object : Thru-beam: > φ 12mm opaque object Retro-reflection: >φ75mm object Diffuse reflection: opaque object, semi-transparent, transparent • Response time : <1ms • Indicate angle : 2~10° • Power voltage : DC 12 ~24V • Current consumption : Thru-beam: <35mA • Retro-reflection: <10mA; Diffuse reflection:<25mA • Output signal : NPN transistor: maximum current 80mA; external voltage 30V DC (output-0V); residual voltage <2v (when current 80mA), <1v (when current 16mA); • PNP transistor: maximum current 80mA; external voltage 30V DC (output-+V); residual voltage <2v (when current 80mA), <1v (when current 16mA);