Silicon carbide power module SER100040K3B

The rated output power of SER100040K3B charging module is 40kW with high power density and high reliability. It adopts Interleaved Parallel LLC technology and 3rd generation SiC Mosfet which has the advantages of 97.03% high peak efficiency and 50-1000Vdc ultra wide output range. HIGH EFFICIENCY AND HIGH STABILITY Overall reduction in energy loss and improvement in stability 3rd Generation SiC Mosfet(Silicon Carbide) Higher breakdown voltage Better high-temperature capability Higher current density Lower switching losses (transitioning from blocking to conducting and vice versa) Interleaved Parallel LLC Topology Compact power conversion circuit design-Interleaved Parallel LLC Simplified drive control auxiliary circuit-control power electronics amount reduced Galvanic Isolation Compact high frequency transformer in LLC topology to enhance the output performance and isolation. New Power Electronics The power conversion semiconductor and topology both have features of high efficiency, by reducing power consumption during turn-on/off(Mosfet switching), conduction, magnetic device loss. ULTRA WIDE OUTPUT VOLTAGE RANGE COMPATIBLE WITH EVERY EV BATTERY CAPACITY REQUIREMENTS 50-1000V ultra wide output range, meeting car types in the marketand adapt to high voltage EVs in future. Compatible with the existing 200V-800V platform and provides full power charging for future development above 900V which is able to avoid investment on high voltage EV charger upgrade construction. Support CCS1, CCS2, CHAdeMO, GB/T and energy storage system. Meet the future trend of high-voltage charging of electric vehicles, compatible with various charging applications and car types.