Process reactor ESY–10/S

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LPE Reactor, developed for the Special Requirements of Growth of II-VI Compound Semiconductors. MCT HgCdTe-Epitaxy for Thermal Imaging Applications. LPE-Equipment for II-VI Technologies The LPE Reactor ESY–10/S Concept was developed by SOF Optoelectronics for the special Requirements of LPE-Growth of II-VI Compound Semiconductors such as HgCdTe. Its high Capacity of 200cm² per epitaxial Process combined with its unique Crucible Material and Design for Melt Homogenization are the leading Features of this Equipment, which is operating successfully worldwide in various Applications In Addition to the standard ESY–10/S Furnace for industrial and R&D Use, Customer-designed Solutions with Plenty of Options can be realised. The ESY–10/S can be supplemented perfectly with an integrated independent Annealing Furnace System. A sealed Nitrogen Loading-Glove-Box enables the Operator to load and unload the Furnace Tubes under protective Atmosphere LPE Furnace – Technical Highlights Single or 2-Tube Combination-Furnace with Vertical LPE and Annealing Quartz Tube 3 Heating Zones for Epitaxy and 1 independent Heating Zone for Hg-Source Hg-Vapor-Source inside Furnace Tube Temperatures up to 750°C Temperature Regulation Accuracy: ± 0.5 °C Suitable for Wafers up to 49 cm² Up to 6 Wafers per Epitaxial Process Perfect Layer Growth Easy removing of Solid Melt after Process Wafer Surface Protection before and after Epi-Growth Fully automatic Computer-Controlled Processing Data-Logging of all Process-Parameters Closed Loading-Glove-Box with N2-Atmosphere The Working Principle of the LPE-Equipment Unit is the Technology of Liquid Phase Epitaxy (LPE) utilizing a rotating-dipping Boat Technique