LPE Equipment for Flexible Use
The Key-Features of the SOF Optoelectronics ESY–10 Concept are a high Capacity combined with the Flexibility for various Types of LPE-Production Technologies. A Capacity of 50 Wafers for a Five-Melt-Process and 200 Wafers for a One-Melt-Process demonstrate the high Potential of this Type of Equipment.
In Addition to the standard ESY–10 Equipment for industrial Use, customer-designed Solutions with plenty of Options can be realised. The ESY–10 especially can be adapted to the Requirements of Research Institutes and Universities.
The ESY–10 can be designed as a one- or double- (twin) System to reduce the Size of Footprint in the Cleanroom.
Available Production Technologies
Standard Infrared
Power Infrared
Power IR (Low UF)
Power Window IR
Power Infrared for IrDA 870 nm
Power Infrared for IrDA 850 nm
Low-Doped GaAs
Technical Highlights
Single or Twin-System
Vertical LPE Quartz Tube
3 Heating Zones
Constant Temperature Flat-Zone: 250 mm
Temperatures up to 1,050°C
Temperature Regulation Accuracy: ± 0.5 °C
Min. Need of Space: 1.2 x 1.2 m²
High Homogeneity of Layer-Thickness by Horizontal Layer-Growth
Fully automatic Computer-
Controlled Processing
Data-Logging of all Process-Parameters
Suitable for Multi-Layer Epitaxial Processes
Suitable for Wafer Diameter up to 4″
Flexible Adaptation of Wafer-Capacity
Minimum of 3 Wafers for Development
Maximum of 200 Wafers for Production
In Principle the ESY–10 Graphite System consists of alternating fixed and movable graphite Plates with Hollows holding the Substrates. The System Capacity is determined by the Stack Height of the Graphite Plates.