XY theta alignment of UV exposure masks | High-precision positioning system for wafer exposure in dry nitrogen atmosphere
Precision Assemblies
786001:002.26
XY theta alignment of UV exposure masks | High-precision positioning system for wafer exposure in dry nitrogen atmosphere - Precision Assemblies
µm alignment for microstructuring under extreme conditions
This 3-axis mask system is specially developed for high-precision alignment of exposure masks for UV lithography. This positioning system has three linear axes with parallel kinematic design: two in X and one in Y. The two vertical axes generate both vertical stroke (equal motion) and rotation (opposite motion). It thus enables high-precision linear and rotational positioning of masks in the nanometer range under ultraviolet radiation as well as in ultra-dry nitrogen atmospheres.
High-precision UV wafer exposure
• Ideal for high-resolution and automated EUV lithography
• Highly fine XY theta alignment of exposure masks up to 0.03 µrad
• Suitable for UV as well as ultra-dry, oxygen-free pure nitrogen atmosphere
• Minimization of scattered radiation due to integrated concept for lubrication and coating
• Flexible, integrated maintenance concept, whereby the system is moved laterally out of the optical axis in
Optionally expandable:
• Various traverse paths
• Material selection and lubrication adapted to the application
• Individual solutions for integration into the customer-specific application
• Version for clean room ISO 14644-1 (up to class 1 on request)