IGBT transistor STGB8NC60KDT4
switching

IGBT transistor - STGB8NC60KDT4 - STMicroelectronics - switching
IGBT transistor - STGB8NC60KDT4 - STMicroelectronics - switching
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Characteristics

Type
IGBT
Technology
switching
Current

8 A

Voltage

600 V

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. All features Lower on voltage drop (VCE(sat)) Very soft ultra fast recovery antiparallel diode Lower CRES / CIES ratio (no cross-conduction susceptibility) Short circuit withstand time 10µs

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Exhibitions

Meet this supplier at the following exhibition(s):

MWC 2025
MWC 2025

3-06 Mar 2025 Barcelona (Spain) Hall 7 - Stand 7A61

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