Monocrystalline silicon solar module EN_STP410-430S-C54-Nshb
CEISOIEC

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Characteristics

Technology: monocrystalline silicon
Certifications: CE, IEC, ISO
Other characteristics: black, IP68
Peak power (Wp): 415 W, 425 W, 430 W, 435 W
Open-circuit voltage: 31.7 V, 31.8 V, 32.2 V, 32.3 V, 32.5 V
Short circuit current: 14 A, 14.1 A, 14.2 A, 14.3 A
Max power current: 14 A, 14.1 A, 14.2 A, 14.3 A
Module efficiency: 21.3 %, 21.5 %, 21.8 %, 22 %, 22.3 %
Lenght: 1,722 mm
(68 in)
Width: 1,134 mm
(45 in)
Height: 30 mm
(1 in)
Weight: 21 kg
(46.3 lb)

Description

Large format 210 mm silicon wafers with the module efficiency up to 21.6% Based on 210 mm large format silicon wafer and PERC monocrystalline cell, increase light receiving area by 80.5% compared with 156mm cell, the conversion efficiency is greatly improved. With Suntech’s non-destructive cutting technology, avoid the damage of cutting surface, realize the optimal half-cell design, and reduce the current loss and the risk of hot spot. MBB technology + High-density packaging technology, the maximum power breaks through 670 W With multi-busbar technology, the transverse propagation path of the current decreases by 50%, reduce resistance loss effectively, realize the maximum power output, meanwhile, and assure the reliability of the module. Suntech adopts high-density packaging technology on Ultra X module, which can shorten distance between the cells and decrease the invalid power generation area greatly, and improves the energy density of the module. The upgraded high efficiency welding strip, lead to more second time refection of oblique light, increase the power generation by 1.57%.