Current probe IsoVu
voltagefrequencypower

Current probe - IsoVu - Tektronix - voltage / frequency / power
Current probe - IsoVu - Tektronix - voltage / frequency / power
Current probe - IsoVu - Tektronix - voltage / frequency / power - image - 2
Current probe - IsoVu - Tektronix - voltage / frequency / power - image - 3
Current probe - IsoVu - Tektronix - voltage / frequency / power - image - 4
Current probe - IsoVu - Tektronix - voltage / frequency / power - image - 5
Current probe - IsoVu - Tektronix - voltage / frequency / power - image - 6
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Characteristics

Measured value
current, voltage, frequency, power
Technology
optical
Domain
fast

Description

Uncover the fast, floating signals that your non-isolated probes are hiding. IsoVu™ Probe Technology virtually eliminates common mode interference using optical isolation. This delivers accurate differential measurements on reference voltages slewing ±60kV at 100V/ns or faster. And with our IsoVu Generation 2 design, you get all the benefits of IsoVu technology at 1/5 of the size. With versatile MMCX connectors and an unmatched combination of bandwidth, dynamic range, and common mode rejection, IsoVu Gen 2 probes are setting new standards for isolated probe technology. An Isolated probe uses galvanic (optical) or RF isolation to divorce the reference voltage of the probe from the reference voltage of the oscilloscope (typically Earth Ground). This enables power designers to accurately resolve high bandwidth, high voltage differential signals in the presence of large common mode voltages. Tektronix has developed a new technology (IsoVu) that uses galvanic isolation to provide best in class common mode rejection performance across a wide bandwidth. The combination of isolation and high frequency in IsoVu probes provide power designers with more accurate measurements than traditional differential probes for applications that require high bandwidth while measuring high voltage signals. Example use cases include: Switched Mode Power Supply design Power FET design/analysis for Wide Bandgap GaN and SiC devices Inverter design Motor Drive design BCI or ESD measurements Current shunt measurements

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