The Sirus T2 Reactive Ion Etcher is a basic plasma etching system designed to etch dielectrics and other films that require fluorine-based chemistries. The small footprint and robust design make it ideal for the lab environment.
Applications
MEMS, Solid State Lighting, Failure Analysis, Research & Development, Pilot Line.
Fluorine Etch Processes
(SF6, CF4, CHF3, O2)
• Carbon• Si
• Epoxy• SiO2
• InSb• Si3N4
• Ir• SiC
• Mo• Ta
• Nb• TaN
• OxyNitride• TiW
• Polyimide • TiN
• Pr (e.g: SiLK or SU8)• W
• Quartz
Tool Standard Features
Sirus T2 reactor with 200mm bottom electrode
System controller (includes Pentium™ based computer and touch screen interface)
Two mass flow controllers
Automatic tuning with 13.56 MHz 600 watt RF generator
Emergency Off system
Automatic pressure control package (butterfly valve with capacitance manometer for pressure measurement)
12 month limited warranty
Optional Features
Recirculating temperature controller
Up to two additional mass flow controllers
Pumps
170 l/s turbo
23.3 cfm rotary vane pump with oil filtration, demister, and Fomblin oil
The Sirus T2 system requires a roughing pump and either a chiller or cooling water with greater than 4 M ohm resistivity.