Gate driver transformer
encapsulatedfor automotive applicationsfor IGBT

Gate driver transformer - Vacuumschmelze GmbH & Co. KG - encapsulated / for automotive applications / for IGBT
Gate driver transformer - Vacuumschmelze GmbH & Co. KG - encapsulated / for automotive applications / for IGBT
Gate driver transformer - Vacuumschmelze GmbH & Co. KG - encapsulated / for automotive applications / for IGBT - image - 2
Gate driver transformer - Vacuumschmelze GmbH & Co. KG - encapsulated / for automotive applications / for IGBT - image - 3
Gate driver transformer - Vacuumschmelze GmbH & Co. KG - encapsulated / for automotive applications / for IGBT - image - 4
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Characteristics

Configuration
encapsulated
Applications
for automotive applications, for IGBT, gate driver
Mounting
through-hole
Other characteristics
compact, switching

Description

Gate drive transformers for IGBT are the key element in the driver circuit supplying the necessary power for switching and maintaining safe galvanic separation between the intermediate circuit and the low voltage control side. By using nanocrystalline VITROPERM® as core material, VACUUMSCHMELZE gate drive transformers combine high power density with high insulations strengths. Benefits: • Reinforced insulation • Low coupling capacitance • Low leakage inductance • Large voltage-time area in compact designs Gate drive transformers are typically used in the DC/DC converter of the Gate Driver Circuit for modern variable-frequency drives (VFD). These are used in • Elevators & escalators • Pumps & fans • Process automation The selection of a suitable Gate Drive Transformer typically starts with the number of windings and transmission ratio: The required number of windings is usually given by the circuit topology while the transmission ratio is determined by the ratio between the input and output voltage. The voltage-time area of the transformer is an important parameter as it basically couples the electric requirements with the internal magnetics. The requirements are calculated by considering the input voltage and switching frequency. In unipolar operation half of the hysteresis loop is used, so ΔB can be considered as 0.9 T if VITROPERM® is used as core material. Accordingly, the required iron cross section AFe can stay small.

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