Photoelectromagnetic detector PEMI-10,6

infraredruggedminiature

2.0 – 12.0 µm, ambient temperature, optically immersed, photoelectromagnetic PEMI-10.6 is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution. Features: - Spectral range from 2.0 to 12.0 µm - Ambient temperature operation - Hyperhemiimmersion microlens technology applied - No bias required - No 1/f noise - Operation from DC to high frequency - Sensitive to IR radiation polarisation Parameter: PEMI-10,6 Material: MCT Type: Photoelectromagnetic Immersion: Non-immersion Cooling: No Wavelength/ λopt/ µm: 10.6 Package: PEM-SMA, PEM-TO8 Window: wedged ZnSe AR coated Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥1,0x108 Time constant/ τ/ ns: ≤1,2