Semiconductor detector PVMI-4TE-8

infraredcompactrugged

2.0 – 9.0 µm, four-stage thermoelectrically cooled, optically immersed, multiple junction PVMI-4TE-8 is four-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 8.0 μm. It especially useful as large active area detector operating within 2.0 to 9.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Applications: - Spectral range from 2.0 to 9.0 µm - Four-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - No bias required - No 1/f noise - Sensitive to IR radiation polarisation Parameter: PVMI-4TE-8 Material: MCT Type: Multiple junction Immersion: Immersion Cooling: Four-stage Wavelength/ λopt/ µm: 8 Package: TO8, TO66 Window: wedged ZnSe AR coated Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥6,0x109 Time constant/ τ/ ns: ≤4