Optical detector PC-4TE-10,6
semiconductordynamicIR

Optical detector - PC-4TE-10,6 - Vigo System - semiconductor / dynamic / IR
Optical detector - PC-4TE-10,6 - Vigo System - semiconductor / dynamic / IR
Optical detector - PC-4TE-10,6 - Vigo System - semiconductor / dynamic / IR - image - 2
Add to favorites
Compare this product
 

Characteristics

Technology
optical, semiconductor, dynamic, IR
Other characteristics
compact, rugged, wavelength, thermoelectrically-cooled

Description

1.0 – 12.0 µm, three-stage thermoelectrically cooled PC-4TE-10.6 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 1.0 - 12.0 µm spectral range - Four-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - Active area from 50×50 µm^2 to 2×2 mm^2 - Long lifetime and MTBF - Stability and reliability - 1/f noise Parameter: PC-4TE-10,6 Material: MCT Type: Photoconductive Immersion: Non-immersion Cooling: Four-stage Wavelength/ λopt/ µm: 10,6 Package: TO8, TO66 Window: wedged ZnSe AR coated Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥3,5x108 Time constant/ τ/ ns: ≤30

Catalogs

No catalogs are available for this product.

See all of Vigo System‘s catalogs

Other Vigo System products

Photoconductors

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.