Optical detector PC-4TE-10,6

semiconductordynamicIR

1.0 – 12.0 µm, three-stage thermoelectrically cooled PC-4TE-10.6 is four-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 1.0 - 12.0 µm spectral range - Four-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - Active area from 50×50 µm^2 to 2×2 mm^2 - Long lifetime and MTBF - Stability and reliability - 1/f noise Parameter: PC-4TE-10,6 Material: MCT Type: Photoconductive Immersion: Non-immersion Cooling: Four-stage Wavelength/ λopt/ µm: 10,6 Package: TO8, TO66 Window: wedged ZnSe AR coated Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥3,5x108 Time constant/ τ/ ns: ≤30