Refractive index detector PCI-9
semiconductordynamichemispherical

Refractive index detector - PCI-9 - Vigo System - semiconductor / dynamic / hemispherical
Refractive index detector - PCI-9 - Vigo System - semiconductor / dynamic / hemispherical
Refractive index detector - PCI-9 - Vigo System - semiconductor / dynamic / hemispherical - image - 2
Refractive index detector - PCI-9 - Vigo System - semiconductor / dynamic / hemispherical - image - 3
Refractive index detector - PCI-9 - Vigo System - semiconductor / dynamic / hemispherical - image - 4
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Characteristics

Detected entity
refractive index
Technology
semiconductor, dynamic, hemispherical, IR
Other characteristics
wavelength

Description

1.0 – 9.3 µm, ambient temperature, optically immersed PCI-9 is uncooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 9.0 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. Features: - High performance in the 1.0 - 9.3 µm spectral range - Ambient temperature operation - Hyperhemiimmersion microlens technology applied - Long lifetime and MTBF - Stability and reliability - 1/f noise Parameter: PCI-9 Material: MCT Type: Photoconductive Immersion: Immersion Cooling: No Wavelength/ λopt/ µm: 9 Package: BNC, TO39 Window: No Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥1,0x108 Time constant /τ/ns: ≤10

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Photoconductors

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