Optical detector PV-3TE-5
semiconductordynamicIR

Optical detector - PV-3TE-5 - Vigo System - semiconductor / dynamic / IR
Optical detector - PV-3TE-5 - Vigo System - semiconductor / dynamic / IR
Optical detector - PV-3TE-5 - Vigo System - semiconductor / dynamic / IR - image - 2
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Characteristics

Technology
optical, semiconductor, dynamic, IR
Other characteristics
compact, rugged, wavelength, thermoelectrically-cooled

Description

2.4 – 5.2 µm, three-stage thermoelectrically cooled PV-3TE-5 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects. Features: - High performance in the 2.4 - 5.2 µm spectral range - Three-stage thermoelectrically cooled - No bias required - No 1/f noiset Parameter: PV-3TE-5 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Three-stage Wavelength/ λopt/ µm: 5 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/D∗/cm⋅Hz1/2⋅W−1: ≥1,0x1010 Time constant/ τ/ ns: ≤80

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Photovoltaic detectors

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