Optical detector PV-3TE-10,6

semiconductordynamicIR

3.2 – 12.0 µm, three-stage thermoelectrically cooled PV-3TE-10.6 is three-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 3.2 - 12.0 µm spectral range - Three-stage thermoelectrically cooled - No bias required - No 1/f noise Parameter: PV-3TE-10,6 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Three-stage Wavelength/ λopt/ µm: 10,6 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/D∗/cm⋅Hz1/2⋅W−1: ≥1,5x108 Time constant/ τ/ ns: ≤10