Optical detector PV-4TE-3,4

semiconductordynamicIR

2.2 – 3.6 µm, four-stage thermoelectrically cooled PV-4TE-3.4 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects. Features: - High performance in the 2.2 - 3.6 µm spectral range - Four-stage thermoelectrically cooled - No bias required - No 1/f noise Parameter: PV-4TE-3,4 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Four-stage Wavelength/λopt/µm: 3,4 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/ D∗/ m⋅Hz1/2⋅W−1: ≥1,0x1011 Time constant/ τ /ns: ≤200